A Compact Trench-Assisted Space-Modulated JTE Design for High-Voltage 4H-SiC Devices

4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis

This paper presents and compares different avalanche breakdown voltage estimation methods in 4H-SiC (silicon carbide) using finite element simulation results on Schottky diode. 4H-SiC avalanche breakdown voltage and depletion width estimated with Baliga’s equations have shown to be higher than other estimation techniques and simulation results, especially for voltages higher than 5kV. This pape...

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

Although various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taking account of the injection-level dependence of carrier lifetimes. It is shown that the major lim...

Characterization of Dielectric Layers for Passivation of 4H-SiC Devices

A New, High-Voltage 4H-SiC Lateral Dual Sidewall Schottky (LDSS) Rectifier: Theoretical Investigation and Analysis

In this paper, we report a new 4 H-silicon carbide (SiC) lateral dual sidewall Schottky (LDSS) rectifier on a highly doped drift layer consisting of a high-barrier sidewall Schottky contact on top of the low-barrier Schottky contact. Using twodimensional (2-D) device simulation, the performance of the proposed device has been evaluated in detail by comparing its characteristics with those of th...

High Performance Ultraviolet 4H-SiC Avalanche Photodiodes